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DMN10H220LE-13

DMN10H220LE-13

DMN10H220LE-13

Diodes Incorporated

MOSFET N-CH 100V 2.3A SOT223

non-compliant

DMN10H220LE-13 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.26925 -
5,000 $0.25275 -
12,500 $0.24450 -
25,000 $0.24000 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 220mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 401 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA
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