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SIHA21N60EF-GE3

SIHA21N60EF-GE3

SIHA21N60EF-GE3

Vishay Siliconix

N-CHANNEL 600V

compliant

SIHA21N60EF-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.20000 $4.2
500 $4.158 $2079
1000 $4.116 $4116
1500 $4.074 $6111
2000 $4.032 $8064
2500 $3.99 $9975
1000 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 176mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2030 pF @ 100 V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
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