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DMN10H170SK3Q-13

DMN10H170SK3Q-13

DMN10H170SK3Q-13

Diodes Incorporated

MOSFET N-CH 100V 12A TO252

non-compliant

DMN10H170SK3Q-13 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.29797 -
5,000 $0.27971 -
12,500 $0.27058 -
25,000 $0.26560 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 140mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1167 pF @ 25 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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