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DMG4800LK3-13

DMG4800LK3-13

DMG4800LK3-13

Diodes Incorporated

MOSFET N-CH 30V 10A TO252-3

compliant

DMG4800LK3-13 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.23812 -
5,000 $0.22438 -
12,500 $0.21062 -
25,000 $0.20100 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 17mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 5 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 798 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.71W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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