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IXTT3N200P3HV

IXTT3N200P3HV

IXTT3N200P3HV

IXYS

MOSFET N-CH 2000V 3A TO268

non-compliant

IXTT3N200P3HV Pricing & Ordering

Quantity Unit Price Ext. Price
1 $37.00000 $37
30 $31.45000 $943.5
120 $29.23000 $3507.6
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 2000 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 25 V
FET Feature -
Power Dissipation (Max) 520W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-268HV (IXTT)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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