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SI6463DQ

SI6463DQ

SI6463DQ

P-CHANNEL MOSFET

non-compliant

SI6463DQ Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.43000 $0.43
500 $0.4257 $212.85
1000 $0.4214 $421.4
1500 $0.4171 $625.65
2000 $0.4128 $825.6
2500 $0.4085 $1021.25
4850 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 8.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 5045 pF @ 10 V
FET Feature -
Power Dissipation (Max) 600mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width)
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