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SCT20N120

SCT20N120

SCT20N120

STMicroelectronics

SICFET N-CH 1200V 20A HIP247

compliant

SCT20N120 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $15.73000 $15.73
30 $13.99500 $419.85
120 $12.47308 $1496.7696
510 $11.22765 $5726.1015
1,020 $10.39737 -
202 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
Vgs (Max) +25V, -10V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
FET Feature -
Power Dissipation (Max) 175W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Mounting Type Through Hole
Supplier Device Package HiP247™
Package / Case TO-247-3
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