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RFP10N15L

RFP10N15L

RFP10N15L

Harris Corporation

N-CHANNEL POWER MOSFET

compliant

RFP10N15L Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.81000 $0.81
500 $0.8019 $400.95
1000 $0.7938 $793.8
1500 $0.7857 $1178.55
2000 $0.7776 $1555.2
2500 $0.7695 $1923.75
36313 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 300mOhm @ 5A, 5V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25 V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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