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SI2306BDS-T1-BE3

SI2306BDS-T1-BE3

SI2306BDS-T1-BE3

Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET

compliant

SI2306BDS-T1-BE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.57000 $0.57
500 $0.5643 $282.15
1000 $0.5586 $558.6
1500 $0.5529 $829.35
2000 $0.5472 $1094.4
2500 $0.5415 $1353.75
1513 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3.16A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 47mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 305 pF @ 15 V
FET Feature -
Power Dissipation (Max) 750mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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