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IRFD213

IRFD213

IRFD213

Harris Corporation

MOSFET N-CH 250V 450MA 4DIP

non-compliant

IRFD213 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.59000 $0.59
500 $0.5841 $292.05
1000 $0.5782 $578.2
1500 $0.5723 $858.45
2000 $0.5664 $1132.8
2500 $0.5605 $1401.25
5563 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
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