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SIS434DN-T1-GE3

SIS434DN-T1-GE3

SIS434DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 35A PPAK 1212-8

non-compliant

SIS434DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.45920 -
6,000 $0.43764 -
15,000 $0.42224 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.6mOhm @ 16.2A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1530 pF @ 20 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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