Welcome to ichome.com!

logo
Home

IRF614

IRF614

IRF614

Harris Corporation

ADVANCED POWER MOSFET

non-compliant

IRF614 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
FET Feature -
Power Dissipation (Max) 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

NTB75N06G
NTB75N06G
$0 $/piece
IRF2903ZLPBF
AUIRFU4292
IXKP10N60C5
IXKP10N60C5
$0 $/piece
IRF6609
IRF3711ZSPBF
SI6413DQ-T1-E3
BUK7E2R6-60E,127
IRF7402PBF

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.