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IRF6609

IRF6609

IRF6609

MOSFET N-CH 20V 31A DIRECTFET

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IRF6609 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2mOhm @ 31A, 10V
Vgs(th) (Max) @ Id 2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6290 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 89W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DIRECTFET™ MT
Package / Case DirectFET™ Isometric MT
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