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HUF76609D3

HUF76609D3

HUF76609D3

MOSFET N-CH 100V 10A IPAK

non-compliant

HUF76609D3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.40000 $0.4
500 $0.396 $198
1000 $0.392 $392
1500 $0.388 $582
2000 $0.384 $768
2500 $0.38 $950
15455 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 425 pF @ 25 V
FET Feature -
Power Dissipation (Max) 49W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package I-PAK
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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