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BSC091N03MSCGATMA1

BSC091N03MSCGATMA1

BSC091N03MSCGATMA1

POWER FIELD-EFFECT TRANSISTOR, 1

non-compliant

BSC091N03MSCGATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.25000 $0.25
500 $0.2475 $123.75
1000 $0.245 $245
1500 $0.2425 $363.75
2000 $0.24 $480
2500 $0.2375 $593.75
24335 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-6
Package / Case 8-PowerTDFN
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