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IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

MOSFET N-CH 800V 3.9A TO251-3

compliant

IPU80R1K4CEBKMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.92000 $0.92
10 $0.83200 $8.32
100 $0.65990 $65.99
500 $0.55386 $276.93
1,000 $0.44785 -
20500 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570 pF @ 100 V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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