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FQI4N80TU

FQI4N80TU

FQI4N80TU

MOSFET N-CH 800V 3.9A I2PAK

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FQI4N80TU Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $0.97359 -
2146 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.95A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.13W (Ta), 130W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package I2PAK (TO-262)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
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