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FDP4D5N10C

FDP4D5N10C

FDP4D5N10C

onsemi

MOSFET N-CH 100V 128A TO220-3

compliant

FDP4D5N10C Pricing & Ordering

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800 $3.80625 $3045
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 310µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5065 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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