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FDP4D5N10C

FDP4D5N10C

FDP4D5N10C

onsemi

MOSFET N-CH 100V 128A TO220-3

compliant

FDP4D5N10C Pricing & Ordering

Quantity Unit Price Ext. Price
800 $3.80625 $3045
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 128A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 310µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5065 pF @ 50 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
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