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FQE10N20CTU

FQE10N20CTU

FQE10N20CTU

MOSFET N-CH 200V 4A TO126-3

compliant

FQE10N20CTU Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.24000 $0.24
500 $0.2376 $118.8
1000 $0.2352 $235.2
1500 $0.2328 $349.2
2000 $0.2304 $460.8
2500 $0.228 $570
21919 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
FET Feature -
Power Dissipation (Max) 12.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-126-3
Package / Case TO-225AA, TO-126-3
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