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IXTP8N65X2M

IXTP8N65X2M

IXTP8N65X2M

IXYS

MOSFET N-CH 650V 4A TO220

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IXTP8N65X2M Pricing & Ordering

Quantity Unit Price Ext. Price
50 $1.85000 $92.5
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 32W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
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