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DMP2006UFGQ-13

DMP2006UFGQ-13

DMP2006UFGQ-13

Diodes Incorporated

MOSFET P-CH 20V PWRDI3333

compliant

DMP2006UFGQ-13 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.45205 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 17.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 7500 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.3W (Ta), 41W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerDI3333-8
Package / Case 8-PowerVDFN
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