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FDD8586

FDD8586

FDD8586

MOSFET N-CH 20V 35A TO252AA

compliant

FDD8586 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.33000 $0.33
500 $0.3267 $163.35
1000 $0.3234 $323.4
1500 $0.3201 $480.15
2000 $0.3168 $633.6
2500 $0.3135 $783.75
83625 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2480 pF @ 10 V
FET Feature -
Power Dissipation (Max) 77W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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