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IPS65R1K0CEAKMA1

IPS65R1K0CEAKMA1

IPS65R1K0CEAKMA1

MOSFET N-CH 650V 4.3A TO251

compliant

IPS65R1K0CEAKMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
1,500 $0.34320 -
1878 items
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Bom Cost Down
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Name Value
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 328 pF @ 100 V
FET Feature -
Power Dissipation (Max) 37W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251
Package / Case TO-251-3 Stub Leads, IPak
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