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| Name | Value |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta), 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262F |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
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