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Name | Value |
---|---|
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12 V |
Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 3.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 0.9V, 4.5V |
Rds On (Max) @ Id, Vgs | 10Ohm @ 100mA, 0.9V |
Vgs(th) (Max) @ Id | 650mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 4.5 V |
Vgs (Max) | -6V |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 6 V |
FET Feature | - |
Power Dissipation (Max) | 820mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | U-WLB1010-4 |
Package / Case | 4-UFBGA, WLBGA |
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