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IPD60R600P7ATMA1

IPD60R600P7ATMA1

IPD60R600P7ATMA1

MOSFET N-CH 650V 6A TO252-3

non-compliant

IPD60R600P7ATMA1 Pricing & Ordering

Quantity Unit Price Ext. Price
2,500 $0.64512 -
5,000 $0.61640 -
12,500 $0.59589 -
4995 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id 4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 400 V
FET Feature -
Power Dissipation (Max) 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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