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| Name | Value |
|---|---|
| Product Status | Active |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 630A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.47mOhm @ 530A, 15V |
| Vgs(th) (Max) @ Id | 3.6V @ 127mA |
| Gate Charge (Qg) (Max) @ Vgs | 1362nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 38900pF @ 800V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | - |
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