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| Name | Value |
|---|---|
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 84.5mOhm @ 20A, 15V |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 30.4 nC @ 15 V |
| Vgs (Max) | +18V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 600 V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
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