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| Name | Value |
|---|---|
| Product Status | Not For New Designs |
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 193A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 120A, 20V |
| Vgs(th) (Max) @ Id | 2.6V @ 6mA (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 378nC @ 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6470pF @ 800V |
| Power - Max | 925W |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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