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WNSC10650T6J

WNSC10650T6J

WNSC10650T6J

WeEn Semiconductors

SILICON CARBIDE POWER DIODE

compliant

WNSC10650T6J Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.68000 $3.68
500 $3.6432 $1821.6
1000 $3.6064 $3606.4
1500 $3.5696 $5354.4
2000 $3.5328 $7065.6
2500 $3.496 $8740
2940 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 650 V
Capacitance @ Vr, F 328pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Supplier Device Package 5-DFN (8x8)
Operating Temperature - Junction 175°C (Max)
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