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SUP90100E-GE3

SUP90100E-GE3

SUP90100E-GE3

Vishay Siliconix

N-CHANNEL 200 V (D-S) MOSFET TO-

compliant

SUP90100E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.80000 $3.8
500 $3.762 $1881
1000 $3.724 $3724
1500 $3.686 $5529
2000 $3.648 $7296
2500 $3.61 $9025
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 10.9mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3930 pF @ 100 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
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