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SUD19N20-90-E3

SUD19N20-90-E3

SUD19N20-90-E3

Vishay Siliconix

MOSFET N-CH 200V 19A TO252

non-compliant

SUD19N20-90-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $1.55853 -
6,000 $1.50445 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 90mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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