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SQS966ENW-T1_GE3

SQS966ENW-T1_GE3

SQS966ENW-T1_GE3

Vishay Siliconix

MOSFET N-CHAN 60V

compliant

SQS966ENW-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.39816 -
6,000 $0.37232 -
15,000 $0.35940 -
30,000 $0.35235 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Rds On (Max) @ Id, Vgs 36mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 572pF @ 25V
Power - Max 27.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount, Wettable Flank
Package / Case PowerPAK® 1212-8W Dual
Supplier Device Package PowerPAK® 1212-8W Dual
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