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SQS407ENW-T1_GE3

SQS407ENW-T1_GE3

SQS407ENW-T1_GE3

Vishay Siliconix

MOSFET P-CH 30V 16A PPAK1212-8W

non-compliant

SQS407ENW-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.41697 -
6,000 $0.38991 -
15,000 $0.37638 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 10.8mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4572 pF @ 20 V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8W
Package / Case PowerPAK® 1212-8W
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