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SQM120N02-1M3L_GE3

SQM120N02-1M3L_GE3

SQM120N02-1M3L_GE3

Vishay Siliconix

MOSFET N-CH 20V 120A TO263

compliant

SQM120N02-1M3L_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.17000 $3.17
500 $3.1383 $1569.15
1000 $3.1066 $3106.6
1500 $3.0749 $4612.35
2000 $3.0432 $6086.4
2500 $3.0115 $7528.75
715 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 290 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 14500 pF @ 10 V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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