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SQJQ112ER-T1_GE3

SQJQ112ER-T1_GE3

SQJQ112ER-T1_GE3

Vishay Siliconix

AUTOMOTIVE N-CHANNEL 100 V (D-S)

non-compliant

SQJQ112ER-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.05000 $4.05
500 $4.0095 $2004.75
1000 $3.969 $3969
1500 $3.9285 $5892.75
2000 $3.888 $7776
2500 $3.8475 $9618.75
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 296A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.53mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 272 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 15945 pF @ 25 V
FET Feature -
Power Dissipation (Max) 600W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 8 x 8
Package / Case 8-PowerSMD, Gull Wing
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