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SQJA12EP-T1_GE3

SQJA12EP-T1_GE3

SQJA12EP-T1_GE3

Vishay Siliconix

N-CHANNEL 100-V (D-S) 175C MOSFE

compliant

SQJA12EP-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.97000 $1.97
500 $1.9503 $975.15
1000 $1.9306 $1930.6
1500 $1.9109 $2866.35
2000 $1.8912 $3782.4
2500 $1.8715 $4678.75
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 49.1 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds 3635 pF @ 25 V
FET Feature -
Power Dissipation (Max) -
Operating Temperature -55°C ~ 125°C
Mounting Type -
Supplier Device Package -
Package / Case -
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