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SQJ418EP-T1_GE3

SQJ418EP-T1_GE3

SQJ418EP-T1_GE3

Vishay Siliconix

MOSFET N-CH 100V 48A PPAK SO-8

non-compliant

SQJ418EP-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.46248 -
6,000 $0.44077 -
15,000 $0.42526 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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