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SQJ407EP-T1_GE3

SQJ407EP-T1_GE3

SQJ407EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 30V 60A PPAK SO-8

SOT-23

non-compliant

SQJ407EP-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.58056 -
6,000 $0.55330 -
15,000 $0.53383 -
0 items
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Bom Cost Down
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Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 68W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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