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SQD40030E_GE3

SQD40030E_GE3

SQD40030E_GE3

Vishay Siliconix

MOSFET N-CHANNEL 40V TO252AA

non-compliant

SQD40030E_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $0.72072 -
6,000 $0.68468 -
10,000 $0.65894 -
0 items
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Bom Cost Down
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs -
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Vgs (Max) -
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) -
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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