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SQD100N02-3M5L_GE3

SQD100N02-3M5L_GE3

SQD100N02-3M5L_GE3

Vishay Siliconix

MOSFET N-CH 20V 100A TO252AA

non-compliant

SQD100N02-3M5L_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
2,000 $0.64680 -
6,000 $0.61446 -
10,000 $0.59136 -
1695 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V
FET Feature -
Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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