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SQ3418AEEV-T1_GE3

SQ3418AEEV-T1_GE3

SQ3418AEEV-T1_GE3

Vishay Siliconix

MOSFET N-CHANNEL 30V 7.8A 6TSOP

non-compliant

SQ3418AEEV-T1_GE3 Pricing & Ordering

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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 8A
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 528 pF @ 25 V
FET Feature -
Power Dissipation (Max) 5W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6
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