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SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

SQ2364EES-T1_GE3

Vishay Siliconix

MOSFET N-CH 60V 2A SOT23-3

compliant

SQ2364EES-T1_GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.23826 -
6,000 $0.22374 -
15,000 $0.20922 -
30,000 $0.19906 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 240mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
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