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SIZ200DT-T1-GE3

SIZ200DT-T1-GE3

SIZ200DT-T1-GE3

Vishay Siliconix

MOSFET N-CH DUAL 30V

non-compliant

SIZ200DT-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.48708 -
6,000 $0.46421 -
15,000 $0.44788 -
0 items
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Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V, 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1510pF @ 15V, 1600pF @ 15V
Power - Max 4.3W (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Supplier Device Package 8-PowerPair® (3.3x3.3)
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