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SIUD412ED-T1-GE3

SIUD412ED-T1-GE3

SIUD412ED-T1-GE3

Vishay Siliconix

MOSFET N-CH 12V 500MA PPAK 0806

compliant

SIUD412ED-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.07469 -
6,000 $0.06532 -
15,000 $0.05595 -
30,000 $0.05282 -
75,000 $0.04970 -
150,000 $0.04345 -
2061 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 340mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.71 nC @ 4.5 V
Vgs (Max) ±5V
Input Capacitance (Ciss) (Max) @ Vds 21 pF @ 6 V
FET Feature -
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 0806
Package / Case PowerPAK® 0806
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