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SISS70DN-T1-GE3

SISS70DN-T1-GE3

SISS70DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 125V 8.5A/31A PPAK

compliant

SISS70DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.64206 -
6,000 $0.61192 -
15,000 $0.59038 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 125 V
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 29.8mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.3 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 62.5 V
FET Feature -
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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