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SISS66DN-T1-GE3

SISS66DN-T1-GE3

SISS66DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 49.1/178.3A PPAK

non-compliant

SISS66DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.71775 $0.71775
500 $0.7105725 $355.28625
1000 $0.703395 $703.395
1500 $0.6962175 $1044.32625
2000 $0.68904 $1378.08
2500 $0.6818625 $1704.65625
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 49.1A (Ta), 178.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.38mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85.5 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3327 pF @ 15 V
FET Feature Schottky Diode (Body)
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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