Welcome to ichome.com!

logo
Home

SISS28DN-T1-GE3

SISS28DN-T1-GE3

SISS28DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 60A PPAK1212-8S

compliant

SISS28DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.43624 -
6,000 $0.41576 -
15,000 $0.40113 -
26 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.52mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 10 V
FET Feature -
Power Dissipation (Max) 57W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

PSMN7R8-120PSQ
BSH203,215
BSH203,215
$0 $/piece
DMN24H3D5L-7
DMP2035UFDF-13
MCH3486-TL-H
MCH3486-TL-H
$0 $/piece
2SK4043LS
2SK4043LS
$0 $/piece
SQ3457EV-T1_BE3
SQ2303ES-T1_BE3
APT47N60SC3G

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.