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SISS23DN-T1-GE3

SISS23DN-T1-GE3

SISS23DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 50A PPAK 1212-8S

non-compliant

SISS23DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.37070 -
6,000 $0.34664 -
15,000 $0.33461 -
30,000 $0.32805 -
0 items
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 300 nC @ 10 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 8840 pF @ 15 V
FET Feature -
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8S
Package / Case PowerPAK® 1212-8S
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