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SISHA10DN-T1-GE3

SISHA10DN-T1-GE3

SISHA10DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 25A/30A PPAK

non-compliant

SISHA10DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.00000 $1
500 $0.99 $495
1000 $0.98 $980
1500 $0.97 $1455
2000 $0.96 $1920
2500 $0.95 $2375
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 2425 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
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